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single low voltage rail-to-rail ou tput operational amplifier azv321 1 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited single low voltage rail-to-rail ou tput operational amplifier azv321 1 bcd semiconductor manufacturing limited data sheet general description the azv321 is single low voltage (2.7-5.5v) operational amplifier which has rail-to-rail output swing capability. the input common-mode voltage range includes ground. the chip exhibits excellent speed-power ratio, achieving 1mhz of bandwidth and 1v/ s of slew rate with low supply current. the azv321 is built with bicmos process. it has bipolar input and output stages for improved noise per- formance, low input offset and higher output current drive. azv321 is available in the package of sc-70-5, which is approximately half the size of sot-23-5. the small package saves space on pc boards, and enables the design of small portable electronic devices. it also allows the designer to place the device closer to the signal source to reduce noise pickup and increase sig- nal integrity. azv321 is also available in standard sot-23-5 package. features for v cc =5v and v ee =0v, typical unless otherwise noted guaranteed 2.7v to 5.5v performance no crossover distortion gain-bandwidth product 1mhz industrial temperature range: -40 o c to +85 o c low supply current: 130 a rail-to-rail output swing under 10k ? load: v oh up to v cc -10mv v ol near to v ee +65mv v cm : -0.1v to v cc -0.8v applications active filters low power, low vo ltage applications general purpose portable devices cellular phone, cordless phone battery-powered systems figure 1. package types of azv321 sot-23-5 sc - 70-5
single low voltage rail-to-rail ou tput operational amplifier azv321 data sheet 2 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited functional block diagram output in+ in- v ee figure 2. pin configuration of azv321 (top view) figure 3. functional bl ock diagram of azv321 pin configuration ks/k package (sc - 70-5/sot-23-5) 1 34 5 2 v cc in- in+ v ee v cc output v bias1 v bias2 v bias3
single low voltage rail-to-rail ou tput operational amplifier azv321 3 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited single low voltage rail-to-rail ou tput operational amplifier azv321 3 bcd semiconductor manufacturing limited data sheet parameter symbol value unit power supply voltage v cc 6v operation junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10 seconds) t lead 260 o c esd (machine model) 200 v esd (human body model) 2000 v note 1: stresses greater than those listed under "absolute maximum ratings" may cause perm anent damage to the device. these are stress ratings only, and functional operation of the de vice at these or any other conditions beyond t hose indicated under "recommended operating conditions" is not implied. exposure to "absol ute maximum ratings" for extended periods may affect device reliability. absolute maximum ratings (note 1) recommended operating conditions parameter symbol min max unit supply voltage v cc 2.7 5.5 v ambient operating temperature range t a -40 85 o c ordering information package temperature range part number marking id packing type lead free green lead free green sc-70-5 -40 to 85 o c azv321kstr-e1 azv321kstr-g1 21 b1 tape & reel sot-23-5 -40 to 85 o c AZV321KTR-E1 azv321ktr-g1 e6d g6d tape & reel circuit type package e1: lead free azv321 tr: tape and reel k: sot-23-5 - ks: sc-70-5 g1: green bcd semiconductor's pb-free pr oducts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages.
single low voltage rail-to-rail ou tput operational amplifier azv321 data sheet 4 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited 2.7v electrical characteristics parameter symbol conditions min typ max unit input offset voltage v io 1.7 7 mv 9 input bias current i b 11 250 na 500 input offset current i io 550 na 150 input common mode voltage range v cm for cmrr 50db -0.1 1.9 v supply current i cc v o =v cc /2, a vcl =1, no load 80 170 a 270 common mode rejection ratio cmrr 0 v cm 1.7v 50 65 db power supply rejection ratio psrr 2.7v v cc 5v v o =1v, 50 60 db output short circuit current i source v o =0v 520 ma i sink v o =2.7v 10 30 ma output voltage swing v oh r l =10k ? to 1.35v 2.60 2.69 v v ol 60 180 mv gain bandwidth product gbwp c l =200pf 1mhz phase margin m 60 deg gain margin g m 10 db all limits are guaranteed for t a =25 o c, v cc =2.7v, v ee =0v, v cm =1.0v, v o =v cc /2 and r l >1m ? , limits in bold types are guaranteed for t a =-40 to 85 o c, unless otherwise specified. (note 2) note 2: limits over the full temperature are guarateed by design, but not tested in production.
single low voltage rail-to-rail ou tput operational amplifier azv321 5 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited single low voltage rail-to-rail ou tput operational amplifier azv321 5 bcd semiconductor manufacturing limited data sheet 5v electrical characteristics parameter symbol conditions min typ max unit input offset voltage v io 1.7 7 mv 9 input bias current i b 11 250 na 500 input offset current i io 550 na 150 input common mode voltage range v cm for cmrr 50db -0.1 4.2 v supply current i cc v o =v cc /2, a vcl =1, no load 130 250 a 350 large signal voltage gain g v r l =2k ? 84 100 db 80 common mode rejection ratio cmrr 0 v cm 4v 50 65 db power supply rejection ratio psrr 2.7v v cc 5v v o =1v, v cm =1v 50 60 db output short circuit current i source v o =0v 560 ma i sink v o =5v 10 160 ma output voltage swing v oh r l =2k ? to 2.5v 4.7 4.96 v 4.6 r l =10k ? to 2.5v 4.9 4.99 4.8 v ol r l =2k ? to 2.5v 120 300 mv 400 r l =10k ? to 2.5v 65 180 280 slew rate sr 1 v/ s gain bandwidth product gbwp c l =200pf 1mhz phase margin m 60 deg gain margin g m 10 db all limits are guaranteed for t a =25 o c, v cc =5v, v ee =0v, v cm =2.0v, v o =v cc /2 and r l >1m ? , limits in bold types are guar- anteed for t a =-40 to 85 o c,unless otherwise specified. (note 2) note 2: limits over the full temperature are guarateed by design, but not tested in production.
single low voltage rail-to-rail ou tput operational amplifier azv321 data sheet 6 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited figure 4. supply current vs. supply voltage figure 5. slew rate vs. supply voltage figure 6. output source current vs. supply voltage figure 7. output sink current vs. supply voltage typical performance characteristics 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 falling edge a v = +1 r l =10k ? v in =1v p-p rising edge slew rate (v/ s) supply voltage (v) 2.53.03.54.04.55.05.5 10 20 30 40 50 60 v ee =0v v o short to v ee source current (ma) supply voltage (v) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 100 120 140 160 v ee =0v v o short to v cc sink current (ma) supply voltage (v) 012345 0 20 40 60 80 100 120 140 160 supply current ( a) supply voltage (v) -40 o c +25 o c +85 o c v cc 3 1 4 out + v cc /2
single low voltage rail-to-rail ou tput operational amplifier azv321 7 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited single low voltage rail-to-rail ou tput operational amplifier azv321 7 bcd semiconductor manufacturing limited data sheet figure 8. short circuit current_i sink vs. temperature figure 9. short circuit current_i source vs. temperature figure 10. output voltage vs.source current figure 11. output voltage vs. sink current typical performance char acteristics (continued) 0.1 1 10 100 0.1 1 5 v cc =5v,v ee =0v r l to v ee v o - output voltage referenced to v cc (v) source current (ma) 0.01 0.1 1 10 100 0.1 1 5 v cc =5v v ee =0v output voltage (v) sink current (ma) -40-20 0 20406080 0 20 40 60 80 100 120 140 160 180 200 v ee =0 v o short to v cc v cc =5v v cc =2.7v output short circuit current_i sink (ma) temperature ( o c) -40-20 0 20406080 0 10 20 30 40 50 60 70 80 90 100 v ee =0 v o short to v ee v cc =5v v cc =2.7v output short circuit current_i source (ma) temperature ( o c)
single low voltage rail-to-rail ou tput operational amplifier azv321 data sheet 8 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited figure 12. output voltage swing vs. supply voltage figure 13 . output voltage s wing vs. temperature typical performance ch aracteristics (continued) figure 14. gain and phase vs. frequency and resistive load 10k 100k 1m -10 0 10 20 30 40 50 60 70 80 -20 0 20 40 60 80 100 gain v cc =2.5v, v ee =-2.5v c l =0 r l =620 ? r l =2k ? r l =100k ? open loop gain (db) frequency (hz) phase margin r l =620 ? r l =2k ? r l =100k ? phase margin (degree) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 10 20 30 40 50 60 70 80 90 100 v cc -v oh v ol negative swing v ee =0v r l =10k ? to 1/2 v cc positive swing output voltage swing (mv) supply voltage (v) -40-20 0 20406080 0 20 40 60 80 100 negtive swing_v ol positave swing_v cc -v oh v cc =2.7v v cc =5v v cc =2.7v r l =10k ? to v cc /2 output voltage swing (mv) temperature ( o c) v cc =5v
single low voltage rail-to-rail ou tput operational amplifier azv321 9 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited single low voltage rail-to-rail ou tput operational amplifier azv321 9 bcd semiconductor manufacturing limited data sheet typical performance ch aracteristics (continued) figure 16. gain and phase vs. frequency and capacitive load figure 17. non-inverting input small signal fi gure 18. non-inverting input large signal pulse response pulse response v cc =5v, v ee =0v r l =2k ? v in =1vp-p unity gain v in v out v cc =5v, v ee =0v r l =2k ? v in =100mvp-p unity gain v in v out figure 15. gain and phase vs. frequency and capacitive load 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 80 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 phase margin (degree) c l =100pf c l =200pf c l =1000pf gain v cc =2.5v v ee =-2.5v r l =100k ? open loop gain (db) frequency (hz) phase margin c l =100pf c l =200pf c l =1000pf 10k 100k 1m -30 -20 -10 0 10 20 30 40 50 60 70 80 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 cl=100pf cl=200pf cl=470pf cl=1000pf gain v cc =2.5v, v ee =-2.5v r l =620 ? open loop gain (db) frequency (hz) phase margin (degree) phase margin cl=100pf cl=200pf cl=470pf cl=1000pf
single low voltage rail-to-rail ou tput operational amplifier azv321 data sheet 10 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 19. output with excessive capacitive load figure 20. output with excessive capacitive load v out v in v in v out v cc =2.5v v ee =-2.5v c l =51pf, r l =2k ? v in =100mvp-p unity gain v cc =2.5v v ee =-2.5v c l =200pf, r l =2k ? v in =100mvp-p unity gain figure 21. thd+n vs. frequency 100 1k 10k 100k 1e-3 0.01 0.1 1 a v =1,v o =2.5v p-p v cc =+2.5v, v ee =-2.5v r=10k ? thd+n (%) frequency (hz) 20 a v =1, v o =1v p-p
single low voltage rail-to-rail ou tput operational amplifier azv321 11 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited single low voltage rail-to-rail ou tput operational amplifier azv321 11 bcd semiconductor manufacturing limited data sheet mechanical dimensions sc-70-5 unit: mm(inch) to be added 2.000(0.079) 2.200(0.087) 2.150(0.085) 2.450(0.096) 1.150(0.045) 1.350(0.053) 0.650(0.026)typ 1.200(0.047) 1.400(0.055) 0.150(0.006) 0.350(0.014) 0.525(0.021)ref 0.080(0.003) 0.150(0.006) 0 8 0.200(0.008) 0.260(0.010) 0.460(0.018) 0.000(0.000) 0.100(0.004) 0.900(0.035) 1.000(0.039) 0.900(0.035) 1.100(0.043)
single low voltage rail-to-rail ou tput operational amplifier azv321 data sheet 12 may. 2010 rev. 1. 4 bcd semiconductor manufacturing limited mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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